We recently reported that the stabilization of the neutral charge state of silicon vacancy center, SiV0, exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second below 20K. Additionally, the SiV0 center has efficient, stable optical transitions with ~90% of its emission into the zero-phonon line and near–transform-limited optical linewidths. We aim to integrate this new defect into a nanophotonic platform in order to create an efficient spin-photon interface. Download full poster